Power device breakdown mechanism and characterization: review and perspective

Abstract Breakdown voltage (BV) is arguably one of the most critical parameters for power devices. While avalanche breakdown prevailing in silicon and carbide devices, it lacking many wide bandgap (WBG) ultra-wide (UWBG) such as gallium nitride high electron mobility transistor existing UWBG due to deployment junction-less device structures or inherent material challenges forming p-n junctions. This paper starts with a survey non-avalanche mechanisms WBG followed by distinction between static dynamic BV. Various BV characterization methods, including pulse I – V sweep, unclamped clamped inductive switching, well continuous overvoltage are comparatively introduced. The physics behind time- frequency-dependent enabling also discussed. concludes identifying research gaps understanding